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NTD3055L170, NVD3055L170
6
1000
5
4
Q 1
Q T
Q 2
100
t r
3
2
1
0
0
V GS
1 2
3
I D = 9 A
T J = 25 ° C
4
5
10
1
1
t f
t d(off)
t d(on)
10
V DS = 30 V
I D = 9 A
V GS = 5 V
100
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage versus Total Charge
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN ? TO ? SOURCE DIODE CHARACTERISTICS
10
8
6
4
2
V GS = 0 V
T J = 25 ° C
0
0.6 0.64
0.68 0.72 0.76
0.8
0.84
0.88 0.92
0.96
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain ? to ? source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T C ) of 25 ° C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance ?
General Data and Its Use.”
Switching between the off ? state and the on ? state may
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the
transition time (t r ,t f ) do not exceed 10 m s. In addition the total
power averaged over a complete switching cycle must not
exceed (T J(MAX) ? T C )/(R q JC ).
A Power MOSFET designated E ? FET can be safely used
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non ? linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E ? FETs can withstand the stress of
drain ? to ? source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I D can safely be assumed to
equal the values indicated.
in switching circuits with unclamped inductive loads. For
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相关代理商/技术参数
NTD3055L170-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170-1G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4H 制造商:ON Semiconductor 功能描述:
NTD30N02 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 24Volts N-Channel DPAK
NTD30N02G 功能描述:MOSFET NFET 24V 0.014R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube